Transistor
2SA1739
Silicon PNP epitaxial planer type
For high speed switching
Unit: mm
2.1卤0.1
s
Features
q
q
q
0.425
1.25卤0.1
0.425
High-speed switch (pair with 2SC3938)
Low collector to emitter saturation voltage V
CE(sat)
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
0.65
1
2.0卤0.2
1.3卤0.1
0.65
3
2
0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
0.9卤0.1
鈥?5
鈥?5
鈥?
鈥?00
鈥?0
150
150
鈥?5 ~ +150
V
V
V
mA
mA
mW
藲C
藲C
0.7卤0.1
Ratings
Unit
0 to 0.1
0.2卤0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
AX
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE1*
h
FE2
V
CE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
= 鈥?V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?0mA
V
CE
= 鈥?V, I
C
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 10mA, f = 200MHz
V
CB
= 鈥?V, I
E
= 0, f = 1MHz
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(Note 1) Next page
(Note 1) Next page
800
50
30
鈥?0.1
1500
1
12
20
19
鈥?0.2
V
MHz
pF
ns
ns
ns
min
typ
max
鈥?0.1
鈥?0.1
150
Unit
碌A
碌A
*
h
FE1
Rank classification
Q
50 ~ 120
R
90 ~ 150
Rank
h
FE1
0.15
鈥?.05
+0.1
0.3
鈥?
+0.1
1
1
2