NPN Silicon Darlington Transistors
BC 875
鈥?BC 879
High current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BC 876, BC 878
BC 880 (PNP)
q
Type
BC 875
BC 877
BC 879
Marking
鈥?/div>
Ordering Code
C62702-C853
C62702-C854
C62702-C855
Pin Configuration
1
2
3
E
C
B
Package
1)
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
C
= 90 藲C
2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - case
3)
1)
2)
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BC 875
45
60
Unit
BC 877
60
80
5
1
2
100
200
0.8 (1)
150
鈥?65 鈥?+ 150
W
藲C
mA
A
BC 879
80
100
V
R
th JA
R
th JC
鈮?/div>
鈮?/div>
156
75
K/W
3)
For detailed information see chapter Package Outlines.
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
脳
10 mm large copper area for
the collector terminal,
R
thJA
= 125 K/W and thus
P
tot max
= 1 W at
T
A
= 25 藲C.
Mounted on Al heat sink 15 mm
脳
25 mm
脳
0.5 mm.
Semiconductor Group
1
5.91
1
2
3
4