WTE
POWER SEMICONDUCTORS
DF150 鈥?DF1510
1.5A GLASS PASSIVATED BRIDGE RECTIFIER
Features
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Glass Passivated Die Construction
Low Forward Voltage Drop
-
+
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
A
B
Plastic Material 鈥?UL Recognition Flammability
Classification 94V-O
~
~
C
E
D
Mechanical Data
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Case: Molded Plastic
Terminals: Plated Leads Solderable per
G
H
MIL-STD-202, Method 208
Polarity: As Marked on Case
I
Weight: 0.38 grams (approx.)
*Low profile models (E = 2.20~2.50mm) are available.
Mounting Position: Any
Please consult factory.
Marking: Type Number
DIL
Dim
Min
Max
A
7.40
7.90
B
6.20
6.50
C
8.13
8.51
D
7.60
8.90
E*
3.20
3.40
G
0.41
0.51
H
3.90
4.20
I
5.0
5.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
A
= 40掳C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
DF150
50
35
@T
A
=25掳C unless otherwise specified
DF151
100
70
DF152
200
140
DF154
400
280
1.5
DF156
600
420
DF158 DF1510
800
560
1000
700
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.5A
@T
A
= 25掳C
@T
A
= 125掳C
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
, T
STG
50
1.1
10
500
25
40
-55 to +150
A
V
碌A
pF
K/W
掳C
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to ambient mounted on PC board with 13mm
2
copper pad.
DF150 鈥?DF1510
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漏 2002 Won-Top Electronics
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