SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
H
2
KTC4075E
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
D
3
DIM
A
B
C
D
E
G
H
J
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTA2014E.
Small Package.
MILLIMETERS
_
1.60 + 0.10
_
0.85 + 0.10
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
A
G
1
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
60
50
5
150
30
100
150
-55
150
UNIT
V
V
V
mA
mA
mW
1. EMITTER
2. BASE
3. COLLECTOR
C
ESM
Marking
Type Name
h
FE
Rank
L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA,
f=1kHz, Rg=10k
400,
BL(8):350~700
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
0.1
0.1
700
0.25
-
3.5
10
V
MHz
pF
dB
UNIT
A
A
Note : h
FE
Classification O(2):70 140, Y(4):120 240, GR(6):200
2001. 12. 5
Revision No : 1
1/3
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