RTU002P02
Transistors
2.5V Drive Pch MOS FET
RTU002P02
Structure
Silicon P-channel MOS FET
External dimensions
(Unit : mm)
UMT3
2.0
0.9
0.3
Features
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
0.2
0.7
(3)
1.25
(2)
(1)
2.1
0.65 0.65
1.3
0.15
Applications
Switching
(1) Source
(2) Gate
(3) Drain
Each lead has same dimensions
Abbreviated symbol : TW
Package specifications
Package
Type
RTU002P02
Code
Basic ordering unit (pieces)
Taping
T106
3000
Inner circuit
(3)
(2)
鈭?
鈭?
(1)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
(1) Source
(2) Gate
(3) Drain
Absolute maximum ratings
(Ta=25掳C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
Each terminal mounted on a recommended land
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
鈭?
P
D
鈭?
Tch
Tstg
Limits
鈭?0
卤12
卤0.25
卤0.5
0.2
150
鈭?5
to
+150
Unit
V
V
A
A
W
掳C
掳C
Thermal resistance
Parameter
Channel to ambient
鈭?/div>
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
鈭?/div>
Limits
625
Unit
掳C/W
0.1Min.
1/2
1
2
3