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SPB80N03L Datasheet

  • SPB80N03L

  • SIPMOS Power Transistor

  • 89.89KB

  • Infineon   Infineon

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SPP80N03L
SIPMOS庐 Power Transistor
Features
鈥?/div>
N channel
鈥?/div>
Enhancement mode
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
V
DS
I
D
30
80
V
A
R
DS(on)
0.006
鈩?/div>
鈥?/div>
Avalanche rated
鈥?/div>
Logic Level
鈥?/div>
dv/dt rated
鈥?/div>
175掳C operating temperature
Type
SPP80N03L
SPB80N03L
Package
Ordering Code
Packaging
Pin 1
G
Pin 2 Pin 3
D
S
P-TO220-3-1 Q67040-S4735-A2 Tube
P-TO263-3-2 Q67040-S4735-A3 Tape and Reel
Maximum Ratings,
at
Tj
= 25 掳C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Value
80
80
320
700
30
6
kV/碌s
mJ
Unit
A
I
D
T
C
= 25 掳C,
T
C
=
100 掳C
1)
Pulsed drain current
I
Dpulse
E
AS
E
AR
dv/dt
T
C
= 25 掳C
Avalanche energy, single pulse
I
D
= 80 A,
V
DD
= 25 V,
R
GS
= 25
鈩?/div>
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
= 80 A,
V
DS
= 24 V, di/dt = 200 A/碌s,
T
jmax
= 175 掳C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
卤20
300
-55... +175
55/175/56
V
W
掳C
T
C
= 25 掳C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1
Semiconductor Group

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